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US 11,901,438 B2Granted
Nanosheet transistor
AssigneeAdeia Semiconductor Solutions LLC
InventorsKangguo Cheng, Juntao Li, Heng Wu, Peng Xu
Life of this patent
Estimating the term…
Abstract
Inner and outer spacers for nanosheet transistors are formed using techniques that improve junction uniformity. One nanosheet transistor device includes outer spacers and an interlevel dielectric layer liner made from the same material. A second nanosheet transistor device includes outer spacers, inner spacers and an interlevel dielectric layer liner that are all made from the same material.
Claims20
A semiconductor nanosheet device comprising:
- epitaxial source-drain regions on opposite sides of a gate stack;
- a vertical stack of nanosheets each extending in a horizontal direction between the epitaxial source-drain regions, and each comprising end portions in contact with the epitaxial source-drain regions and a center portion that extends between the end portions;
- the gate stack surrounding each of the center portions;
- and
- pairs of inner spacers on opposite sides of the gate stack, each pair separating a portion of the gate stack from the epitaxial source-drain regions, wherein:
- a middle portion of each nanosheet is wider in the horizontal direction than a top portion and a bottom portion of the respective nanosheet.
3 more elements
A semiconductor nanosheet device comprising:
- epitaxial source-drain regions on opposite sides of a gate stack, each epitaxial source-drain region comprising a first side that faces the gate stack and an opposite second side;
- a vertical stack of nanosheets each extending in a horizontal direction between the epitaxial source-drain regions, and each comprising end portions in contact with the epitaxial source-drain regions and a center portion that extends between the end portions, wherein the gate stack surrounds each of the center portions;
- an outer spacer comprising at least a first portion disposed adjacent to a portion of the gate stack disposed above the uppermost nanosheet;
- and
- pairs of inner spacers on opposite sides of the gate stack, each inner spacer disposed between and separating respective portions of the gate stack and the epitaxial source-drain regions, wherein:
- the end portions of each nanosheet laterally extend further into the epitaxial source-drain regions than the adjacent pair of inner spacers disposed therebelow;
- and
- a middle portion of each nanosheet is wider in the horizontal direction than a top portion and a bottom portion of the respective nanosheet.
5 more elements
Dependencies are inferred from the claim text.