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US 11,901,437 B2Granted
Semiconductor device and method for fabricating the same
AssigneeMarlin Semiconductor Limited
InventorsTe-Chang Hsu, Chun-Chia Chen, Yao-Jhan Wang
Life of this patent
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Abstract
A semiconductor device includes a gate structure on a substrate, an offset spacer adjacent to the gate structure, a main spacer around the offset spacer, a source/drain region adjacent to two sides of the main spacer, a contact etch stop layer (CESL) adjacent to the main spacer, and an interlayer dielectric (ILD) layer around the CESL. Preferably, a dielectric constant of the offset spacer is higher than a dielectric constant of the main spacer.
Claims9
A semiconductor device, comprising:
- a gate structure on a substrate;
- a spacer adjacent to and in direct contact with the gate structure, wherein the spacer comprises only a single layer, a dielectric constant of the spacer proximate to the gate structure is higher than a dielectric constant of the spacer away from the gate structure;
- and
- a source/drain region adjacent to two sides of the spacer.
1 more element
Dependencies are inferred from the claim text.