Semiconductor having a source/drain contact with a single inner spacer
AssigneeQUALCOMM Incorporated
InventorsJunjing Bao, Haining Yang, Youseok Suh
Life of this patent
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Abstract
In some aspects, a semiconductor die includes an insulation layer disposed on a substrate, a gate spacer disposed in the insulation layer, a gate disposed between the gate spacer, a first dielectric gate layer disposed on the gate between the gate spacer, a second dielectric gate layer disposed on the first dielectric gate layer between the gate spacer, a gate contact coupled to the gate and in contact with the first dielectric gate layer and the second dielectric gate layer, and a source/drain contact that has a single inner spacer.
Claims19
An apparatus comprising:
- a semiconductor die comprising:
- an insulation layer disposed on a substrate;
- a gate spacer disposed in the insulation layer;
- a gate disposed between the gate spacer;
- a first dielectric gate layer disposed on the gate between the gate spacer;
- a second dielectric gate layer disposed on the first dielectric gate layer between the gate spacer;
- a gate contact coupled to the gate and in contact with the first dielectric gate layer and the second dielectric gate layer;
- a source/drain contact, wherein the source/drain contact has a single inner spacer;
- and
- a local interconnect disposed on the source/drain contact, wherein the local interconnect is in contact with the second dielectric gate layer and wherein the gate is not in contact with the second dielectric gate layer.
A method of forming a semiconductor die, the method comprising:
- disposing an insulation layer on a substrate;
- disposing a gate spacer in the insulation layer;
- disposing a gate between the gate spacer;
- disposing a first dielectric gate layer on the gate between the gate spacer;
- disposing a second dielectric gate layer on the first dielectric gate layer between the gate spacer;
- forming a gate contact coupled to the gate and in contact with the first dielectric gate layer and the second dielectric gate layer;
- forming a source/drain contact having a single inner spacer;
- and
- disposing a local interconnect on the source/drain contact, wherein the local interconnect is in contact with the second dielectric gate layer and wherein the gate is not in contact with the second dielectric gate layer.
Dependencies are inferred from the claim text.