Coating liquid for forming metal oxide film, oxide insulator film, field-effect transistor, display element, image display device, and system
AssigneeRicoh Company, Ltd.
InventorsNaoyuki Ueda, Yuki Nakamura, Yukiko Abe, Shinji Matsumoto, Yuji Sone, Ryoichi Saotome, Sadanori Arae, Minehide Kusayanagi
Life of this patent
Estimating the term…
Abstract
A field-effect transistor including: a source electrode and a drain electrode; a gate electrode; a semiconductor layer; and a gate insulating layer, wherein the gate insulating layer is an oxide insulator film including A element and B element, the A element being one or more selected from the group consisting of Zr and Hf and the B element being one or more selected from the group consisting of Be and Mg.
Claims15
A field-effect transistor comprising:
- a source electrode and a drain electrode;
- a gate electrode;
- a semiconductor layer;
- and
- a gate insulating layer,
- wherein the gate insulating layer is an oxide insulator film including A element and B element, the A element being one or more selected from the group consisting of Zr and Hf and the B element being one or more selected from the group consisting of Be and Mg, and
- wherein the oxide insulator film is an oxide insulator film of a (Be, Mg)O—(Zr, Hf)O2-system, where the oxide insulator film is free from a perovskite phase and a layered perovskite phase.
An oxide insulator film comprising:
- A element that is one or more selected from the group consisting of Zr and Hf;
- and
- B element that is one or more selected from the group consisting of Be and Mg, and
- wherein the oxide insulator film is an oxide insulator film of a (Be, Mg)O—(Zr, Hf)O2-system, where the oxide insulator film is free from a perovskite phase and a layered perovskite phase.
A coating liquid for forming a metal oxide film, the coating liquid comprising:
- A element that is one or more selected from the group consisting of Zr and Hf;
- and
- B element that is one or more selected from the group consisting of Be and Mg, and
- wherein the oxide insulator film is an oxide insulator film of a (Be, Mg)O—(Zr, Hf)O2-system, where the oxide insulator film is free from a perovskite phase and a layered perovskite phase.
Dependencies are inferred from the claim text.