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US 11,901,430 B2Granted
Semiconductor device, method of manufacturing semiconductor device, inverter circuit, drive device, vehicle, and elevator
AssigneeKabushiki Kaisha Toshiba
InventorTatsuo Shimizu
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Abstract
According to an embodiment, provided is a semiconductor device including: a first electrode; a second electrode; and a silicon carbide layer disposed between the first electrode and the second electrode, the silicon carbide layer including: a first silicon carbide region of an n-type; and a second silicon carbide region disposed between the first silicon carbide region and the first electrode, the second silicon carbide being in contact with the first electrode, and the second silicon carbide containing one oxygen atom bonding with four silicon atoms.
Claims4
A method of manufacturing a semiconductor device, comprising:
- performing ion implantation of oxygen into a silicon carbide layer having a first silicon carbide region of an n-type;
- performing a first heat treatment after the performing ion implantation;
- forming a conductive film directly on the silicon carbide layer after the performing the first heat treatment;
- and
- performing a second heat treatment after the forming a conductive film, a temperature of the first heat treatment is higher than a temperature of the second heat treatment.
2 more elements
Dependencies are inferred from the claim text.