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US 11,901,427 B2Granted
Gate contact isolation in a semiconductor
AssigneeQUALCOMM Incorporated
InventorsHaining Yang, Junjing Bao
Life of this patent
Estimating the term…
Abstract
In an aspect, a semiconductor device includes a gate. The gate includes a first portion that is located on one end of the gate, a second portion that is located on an opposite end of the gate from the first portion, and a third portion that is located in-between the first portion and the second portion. A first cap located on top of the first portion. A second cap located on top of the second portion. The third portion is capless. A gate contact is located on top of the third portion.
Claims21
A semiconductor device comprising:
- a gate comprising:
- a first portion that is located on one end of the gate;
- a second portion that is located on an opposite end of the gate from the first portion;
- a third portion that is located in-between the first portion and the second portion;
- and
- a fourth portion that is located in-between the first portion and the third portion;
- a first cap located on top of the first portion;
- a second cap located on top of the second portion;
- and
- a gate contact located on top of the third portion, wherein the fourth portion is capless and contactless.
7 more elements
A method of fabricating a semiconductor device, the method comprising:
- forming a gate structure, the gate structure comprising:
- a first portion that is located on one end of the gate structure;
- a second portion that is located on an opposite end of the gate structure from the first portion;
- a third portion that is located in-between the first portion and the second portion;
- and
- a fourth portion that is located in-between the first portion and the third portion;
- forming a first cap located on top of the first portion;
- forming a second cap located on top of the second portion;
- and
- forming a gate contact located on top of the third portion, wherein the fourth portion is capless and contactless.
7 more elements
Dependencies are inferred from the claim text.