Semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Cheng Chen, Chun-Hsiung Lin, Chih-Hao Wang
Life of this patent
Estimating the term…
Abstract
A device includes an active region, a gate structure, a source/drain epitaxial structure, an epitaxial layer, a metal alloy layer, a contact, and a contact etch stop layer. The gate structure is across the active region. The source/drain epitaxial structure is over the active region and adjacent the gate structure. The epitaxial layer is over the source/drain epitaxial structure. The metal alloy layer is over the epitaxial layer. The contact is over the metal alloy layer. The contact etch stop layer lines sidewalls of the source/drain epitaxial structure. The metal alloy layer is spaced apart from the contact etch stop layer.
Claims20
A device comprising:
- an active region;
- a gate structure across the active region and extending in a first direction;
- a source/drain epitaxial structure over the active region and adjacent the gate structure;
- an epitaxial layer over the source/drain epitaxial structure, wherein a maximal width of the epitaxial layer is less than a maximal width of the source/drain epitaxial structure in the first direction;
- a metal alloy layer over the epitaxial layer;
- a contact over the metal alloy layer;
- and
- a contact etch stop layer lining sidewalls of the source/drain epitaxial structure, wherein the metal alloy layer is spaced apart from the contact etch stop layer.
A device comprising:
- a fin structure;
- a gate structure over the fin structure;
- a source/drain epitaxial structure above the fin structure;
- a metal alloy layer over the source/drain epitaxial structure;
- a contact etch stop layer conformal to sidewalls of the source/drain epitaxial structure;
- and
- a residue over the source/drain epitaxial structure and between the metal alloy layer and the contact etch stop layer, wherein a top surface of the residue is lower than a top surface of the contact etch stop layer.
A device comprising:
- a semiconductive layer over a substrate;
- a gate structure over the substrate, surrounding the semiconductive layer and extending in a first direction;
- a source/drain epitaxial structure connected to the semiconductive layer;
- a contact over the source/drain epitaxial structure;
- and
- an epitaxial layer directly between the source/drain epitaxial structure and the contact, wherein a width of the contact is greater than a width of the epitaxial layer, and a maximal width of the epitaxial layer is less than a maximal width of the source/drain epitaxial structure in the first direction.
Dependencies are inferred from the claim text.