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US 11,901,420 B2Granted
Manufacturing method for gate electrode and thin film transistor and display panel
AssigneesBeihai Hkc Optoelectronics Technology Co., Ltd., Hkc Corporation Limited
InventorsEn-Tsung Cho, Yuming Xia, Wei Li
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Abstract
The present application discloses a manufacturing method for a gate electrode and a thin film transistor, and a display panel, including: depositing an aluminum film on a substratum by physical vapor deposition; depositing a molybdenum film over the aluminum film by atomic layer deposition; and etching the aluminum film and the molybdenum film to form the gate electrode of a predetermined pattern.
Claims13
A manufacturing method for a gate electrode, comprising:
- depositing an aluminum film on a substratum by physical vapor deposition;
- depositing a molybdenum film over the aluminum film by atomic layer deposition;
- and
- etching the aluminum film and the molybdenum film to form the gate electrode of a predetermined pattern;
- wherein depositing the molybdenum film over the aluminum film by atomic layer deposition comprises:
- A:
- placing the substratum with the aluminum film in a reaction chamber of an atomic layer deposition apparatus;
- B:
- continuously introducing a molybdenum precursor for a preset time period into the atomic layer deposition apparatus, remaining the molybdenum precursor for a preset time period after the introduction, and introducing an inert gas for purging;
- C:
- continuously introducing a reducing gas for a preset time into the atomic layer deposition apparatus, remaining the reducing gas for a preset time period after the introduction, and introducing the inert gas for purging;
- and
- D:
- repeating the above operations B and C for a preset number of times to form the molybdenum film.
11 more elements
A manufacturing method for a thin film transistor, comprising:
- S1:
- forming an aluminum film on a substratum through magnetron sputtering;
- S2:
- placing the substratum with the aluminum film in a reaction chamber of an atomic layer deposition apparatus;
- S3:
- continuously introducing a molybdenum precursor for a preset time period into the atomic layer deposition apparatus, remaining for a preset time period after the introduction, and introducing an inert gas for purging;
- S4:
- continuously introducing a reducing gas for a preset time into the atomic layer deposition apparatus, remaining for a preset time period after the introduction, and introducing the inert gas for purging;
- S5:
- repeating the steps S3 and S4 for a preset number of times to form a molybdenum film;
- S6:
- etching the aluminum film and the molybdenum film to form the gate electrode of a predetermined pattern;
- and
- S7:
- sequentially forming an insulating layer, a semiconductor layer, source and drain electrodes and a passivation layer above the gate electrode to form the thin film transistor.
12 more elements
Dependencies are inferred from the claim text.