GaN/diamond wafers
AssigneeRFHIC Corporation
InventorWon Sang Lee
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Abstract
Wafers including a diamond layer and a semiconductor layer having III-Nitride compounds and methods for fabricating the wafers are provided. A nucleation layer, at least one semiconductor layer having III-Nitride compound and a protection layer are formed on a silicon substrate. Then, a silicon carrier wafer is glass bonded to the protection layer. Subsequently the silicon substrate, nucleation layer and a portion of the semiconductor layer are removed. Then, an intermediate layer, a seed layer and a diamond layer are sequentially deposited on the III-Nitride layer. Next, a support wafer that includes a GaN layer (or a silicon layer covered by a protection layer) is deposited on the diamond layer. Then, the silicon carrier wafer and the protection layer are removed.
Claims10
A method for processing a semiconductor wafer, comprising:
- disposing and patterning a first metal layer on a semiconductor layer of a semiconductor wafer, wherein the semiconductor wafer includes a support wafer, a diamond layer, an intermediate layer and the semiconductor layer;
- drilling one or more holes from the first metal layer toward the support wafer to thereby form one or more vias that extend from the first metal layer into the support wafer;
- disposing a second metal layer on the first metal layer and in a portion of the one or more vias;
- and
- removing the support wafer to expose a surface of the diamond layer.
Dependencies are inferred from the claim text.