Semiconductor device with a defect layer and method of fabrication therefor
AssigneeNXP B.V.
InventorsLjubo Radic, Viet Thanh Dinh, Petrus Hubertus Cornelis Magnee
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Abstract
A semiconductor device includes a semiconductor substrate, a first semiconductor region of a first semiconductor type, formed within the semiconductor substrate, wherein the first semiconductor region includes a first doped region formed in a lower portion of the first semiconductor region and a second doped region formed over the first doped region in an upper portion of the first semiconductor region. A defect layer having an upper surface formed in an upper portion of the first doped region. A second semiconductor region of a second semiconductor type is formed over the first semiconductor region.
Claims17
A semiconductor device comprising:
- a semiconductor substrate;
- a first semiconductor region of a first semiconductor type, formed within the semiconductor substrate, wherein the first semiconductor region includes a first doped region formed in a lower portion of the first semiconductor region and a second doped region formed over the first doped region in an upper portion of the first semiconductor region, and a defect layer having an upper surface formed in an upper portion of the first doped region, wherein the first doped region has a dopant concentration higher than a dopant concentration of the second doped region;
- a second semiconductor region of a second semiconductor type formed over the first semiconductor region;
- and
- a fourth semiconductor region formed below the second semiconductor region and between the first doped region, the second doped region, and an isolation region sidewall formed laterally adjacent the first doped region and the second doped region, wherein the fourth semiconductor region includes a doping level below a doping level of the second doped region.
A bipolar transistor device comprising:
- a semiconductor substrate that includes silicon;
- a collector region, formed within the semiconductor substrate, wherein the collector region includes a first doped region formed in a lower portion of the collector region, a second doped region formed over the first doped region in an upper portion of the collector region, and a defect layer having an upper surface formed in an upper portion of the first doped region wherein the first doped region has a dopant concentration higher than a dopant concentration of the second doped region;
- a base region formed over the collector region, wherein the base region includes single crystal silicon and germanium;
- an emitter region formed over the base region, wherein the emitter region includes silicon;
- and
- a spacer region formed below the base region and between the first doped region, the second doped region, and a collector region sidewall formed laterally adjacent the first doped region and the second doped region, wherein the spacer region includes a doping level below a doping level of the second doped region.
A method for forming a bipolar transistor device, the method comprising:
- forming a semiconductor substrate;
- forming a collector region within the semiconductor substrate, wherein forming the collector region includes forming a first doped region in a lower portion of the collector region, forming a second doped region over the first doped region in an upper portion of the collector region, and forming a defect region between the first doped region and the second doped region wherein the first doped region has a dopant concentration higher than a dopant concentration of the second doped region, and wherein forming the collector region includes forming a spacer region under the base region, between a collector sidewall and the first doped region and the second doped region, wherein a dopant concentration of the spacer region is lower than a dopant concentration of the second doped region;
- forming a base region formed over the collector region;
- and
- forming an emitter region formed over the base region.
Dependencies are inferred from the claim text.