Facet-free epitaxial structures for semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWinne Victoria Wei-Ning Chen, Pang-Yen Tsai
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Abstract
The present disclosure describes a semiconductor device having facet-free epitaxial structures with a substantially uniform thickness. The semiconductor device includes a fin structure on a substrate. The fin structure includes a fin bottom portion and a fin top portion. A top surface of the fin bottom portion is wider than a bottom surface of the fin top portion. The semiconductor device further includes a dielectric layer on the fin top portion, an amorphous layer on the dielectric layer, and an epitaxial layer. The epitaxial layer is on a top surface of the amorphous layer, sidewall surfaces of the amorphous layer, the dielectric layer, the fin top portion, and the top surface of the fin bottom portion.
Claims20
A semiconductor device, comprising:
- a fin structure on a substrate, wherein the fin structure comprises a fin bottom portion and a fin top portion, and wherein a top surface of the fin bottom portion is wider than a bottom surface of the fin top portion;
- a dielectric layer on the fin top portion;
- an amorphous layer on the dielectric layer;
- and
- an epitaxial layer on a top surface of the amorphous layer, sidewall surfaces of the amorphous layer, the dielectric layer, the fin top portion, and the top surface of the fin bottom portion.
A semiconductor device, comprising:
- a fin structure on a substrate, wherein the fin structure comprises a fin bottom portion and a fin top portion;
- an isolation structure on the substrate and adjacent to the fin structure, wherein a top surface of the isolation structure is coplanar with a top surface of the fin bottom portion;
- a dielectric layer on the fin top portion;
- an amorphous layer on the dielectric layer;
- and
- an epitaxial layer on a top surface of the amorphous layer, sidewall surfaces of the amorphous layer, the dielectric layer, the fin top portion, and the top surface of the fin bottom portion.
A method, comprising:
- forming a dielectric layer on a substrate;
- forming an amorphous layer on the dielectric layer;
- forming a fin structure on the substrate, wherein the dielectric layer and the amorphous layer are on the fin structure;
- and
- removing a portion of the amorphous layer, a portion of the dielectric layer, and a portion of the fin structure to expose top surfaces of a bottom portion of the fin structure.
Dependencies are inferred from the claim text.