Semiconductor device and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPei-Yu Chou, Tze-Liang Lee
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Abstract
A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first gate electrode disposed on the substrate and located in a first region of the semiconductor device. The semiconductor device also includes a first sidewall structure covering the first gate electrode. The semiconductor device further includes a protective layer disposed between the first gate electrode and the first sidewall structure. In addition, the semiconductor device includes a second gate electrode disposed on the substrate and located in a second region of the semiconductor device. The semiconductor device also includes a second sidewall structure covering a lateral surface of the second gate electrode.
Claims17
A semiconductor device, comprising:
- a substrate;
- a gate structure disposed on the substrate;
- a conductive layer disposed on the gate structure and electrically connected to the gate structure;
- and
- a dielectric structure disposed on the gate structure, wherein the dielectric structure comprises a first dielectric layer and an air gap spaced apart from the conductive layer by the first dielectric layer, and the first dielectric layer has a lateral surface defining a recess tapered toward the substrate, and the lateral surface of the first dielectric layer is exposed to the air gap.
A semiconductor device, comprising:
- a substrate comprising source/drain (S/D) regions;
- a gate structure disposed on the substrate;
- a contact disposed on the S/D regions;
- a conductive layer comprises a first portion electrically connected to the gate structure and a second portion electrically connected to the contact;
- and
- an air gap disposed between the first portion and the second portion of the conductive layer, wherein an aperture of the air gap is tapered along a direction toward the substrate.
A semiconductor device, comprising:
- a substrate;
- a conductive layer disposed on the substrate;
- and
- a dielectric structure disposed in the conductive layer, wherein the dielectric structure comprises a first dielectric layer, a second dielectric layer, and an air gap between the first dielectric layer and the second dielectric layer, and the air gap is separated from the conductive layer, and wherein the air gap surrounds the second dielectric layer, and the second dielectric layer is tapered toward the substrate.
Dependencies are inferred from the claim text.