Capacitor architectures in semiconductor devices
AssigneeIntel Corporation
InventorsSudipto Naskar, Manish Chandhok, Abhishek A. Sharma, Roman Caudillo, Scott B. Clendenning, Cheyun Lin
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Abstract
Embodiments herein describe techniques for a semiconductor device including a three dimensional capacitor. The three dimensional capacitor includes a pole, and one or more capacitor units stacked around the pole. A capacitor unit of the one or more capacitor units includes a first electrode surrounding and coupled to the pole, a dielectric layer surrounding the first electrode, and a second electrode surrounding the dielectric layer. Other embodiments may be described and/or claimed.
Claims17
A method for forming a semiconductor device, the method comprising:
- forming a transistor, wherein the transistor includes a channel along a first direction;
- forming a pole placed in a second direction orthogonal to the first direction;
- forming a first electrode surrounding and coupled to the pole;
- forming a dielectric layer surrounding the first electrode, and
- forming a second electrode surrounding the dielectric layer, wherein the first electrode, the dielectric layer, and the second electrode form a capacitor unit around the pole, wherein the capacitor unit is a first capacitor unit, and the method further comprises:
- forming a second capacitor unit above the first capacitor unit, wherein forming the second capacitor unit includes:
- forming a first electrode of the second capacitor unit surrounding and coupled to the pole and above the first capacitor unit;
- forming a dielectric layer of the second capacitor unit surrounding the first electrode of the second capacitor, and
- forming a second electrode of the second capacitor unit surrounding the dielectric layer of the second capacitor.
A method of fabricating a semiconductor device, the method comprising:
- forming a three dimensional capacitor including:
- forming a pole;
- and forming one or more capacitor units stacked around the pole,
- wherein a capacitor unit of the one or more capacitor units includes:
- a first electrode surrounding and coupled to the pole,
- a dielectric layer surrounding the first electrode, and
- a second electrode surrounding the dielectric layer, wherein the capacitor unit is a first capacitor unit, and the capacitor further includes a second capacitor unit, and wherein a dielectric layer of the first capacitor unit and a dielectric layer of the second capacitor unit form a continuous dielectric layer conformally surrounding the pole and the first electrodes of the first capacitor unit and the second capacitor unit, and the second electrode of the first capacitor and the second electrode of the second capacitor form a continuous electrode.
Dependencies are inferred from the claim text.