Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorsJun Hyuk Seo, Myoung Sik Chang
Life of this patent
Estimating the term…
Abstract
A method for fabricating a semiconductor device includes: forming a mold structure including a mold layer and a supporter layer over a semiconductor substrate; forming an opening penetrating the mold structure; forming a protective layer on a bottom surface and a sidewall of the opening; forming a lower electrode over the protective layer; selectively etching the supporter layer to form a supporter that supports the lower electrode; removing the mold layer to define a non-exposed portion and an exposed portion of an outer wall of the protective layer; and selectively trimming the exposed portion of the protective layer to form a protective layer pattern between the supporter and the lower electrode.
Claims13
A semiconductor device comprising:
- a lower electrode over a semiconductor substrate;
- a supporter supporting an outer wall of the lower electrode;
- an amorphous protective layer pattern between the supporter and the lower electrode;
- and
- a lower-level amorphous protective layer pattern positioned between the lower electrode and the semiconductor substrate, and vertically spaced apart from the amorphous protective layer pattern.
Dependencies are inferred from the claim text.