Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate;
• a first capacitance section on the semiconductor substrate, the first capacitance section including a first electrode layer, a first dielectric layer, and a second electrode layer;
• a second capacitance section on the semiconductor substrate, the second capacitance section including a third electrode layer, a second dielectric layer, and a fourth electrode layer;
• a first external electrode;
• a second external electrode;
• a third external electrode;
• a fourth external electrode;
• a first lead wire connecting the first external electrode to the first electrode layer;
• a second lead wire connecting the second external electrode to the second electrode layer;
• a third lead wire connecting the third external electrode to the third electrode layer;
• and
• a fourth lead wire connecting the fourth external electrode to the fourth electrode layer, wherein
• an inductance L1 is a sum of an inductance of the first and second lead wires,
• an inductance L2 is a sum of an inductance of the third and fourth lead wires,
• the first electrode layer and the second electrode layer of the first capacitance section are not connected to the third or fourth external electrodes,
• the third electrode layer and the fourth electrode layer of the second capacitance section are not connected to the first or second external electrodes,
• an electrostatic capacity C1 of the first capacitance section and an electrostatic capacity C2 of the second capacitance section are different, and
• L1/L2=0.8 to 1.2 such that, when capacitance is changed between C1 and C2, impedance characteristics of the first capacitance section and the second capacitance section are equal in a high frequency range thereof where inductance is dominant with respect to impedance.