Back to results
US 11,901,400 B2Granted
MFM capacitor and process for forming such
AssigneeIntel Corporation
InventorsNazila Haratipour, Chia-Ching Lin, Sou-Chi Chang, Ashish Verma Penumatcha, Owen Loh, Mengcheng Lu, Seung Hoon Sung, Ian A. Young, Uygar Avci, Jack T. Kavalieros
Life of this patent
Estimating the term…
Abstract
A capacitor is disclosed that includes a first metal layer and a seed layer on the first metal layer. The seed layer includes a polar phase crystalline structure. The capacitor also includes a ferroelectric layer on the seed layer and a second metal layer on the ferroelectric layer.
Claims19
A capacitor, comprising:
- a first metal layer in a trench in a dielectric layer, the first metal layer having an uppermost surface at a same level as an uppermost surface of the dielectric layer;
- a seed layer on the first metal layer, the seed layer including a polar phase crystalline structure;
- a ferroelectric layer on the seed layer, the ferroelectric layer along and in contact with the uppermost surface of the dielectric layer;
- and
- a second metal layer on the ferroelectric layer, wherein the ferroelectric layer extends laterally beyond the second metal layer and laterally beyond the first metal layer, and wherein the ferroelectric layer has a bottommost surface below the uppermost surface of the first metal layer.
2 more elements
A capacitor, comprising:
- a first metal layer in an opening in a first dielectric layer, the first metal layer having an uppermost surface at a same level as an uppermost surface of the first dielectric layer;
- a ferroelectric layer on the first metal layer, the ferroelectric layer along and in contact with the uppermost surface of the first dielectric layer;
- a second metal layer on the ferroelectric layer;
- and
- a third metal layer on the second metal layer, wherein the thickness of the third metal layer is greater than the thickness of the second metal layer, wherein the ferroelectric layer extends laterally beyond the second metal layer and the third metal layer and laterally beyond the first metal layer, and wherein the ferroelectric layer has a bottommost surface below the uppermost surface of the first metal layer.
2 more elements
A system, comprising:
- one or more processing components;
- and
- one or more data storage components, the data storage components including at least one capacitor, the at least one capacitor including:
- a first metal layerin a trench in a dielectric layer, the first metal layer having an uppermost surface at a same level as an uppermost surface of the dielectric layer;
- a seed layer on the first metal layer, the seed layer including a polar phase crystalline structure;
- a ferroelectric layer on the seed layer, the ferroelectric layer along and in contact with the uppermost surface of the dielectric layer;
- and
- a second metal layer on the ferroelectric layer, wherein the ferroelectric layer extends laterally beyond the second metal layer and laterally beyond the first metal layer, and wherein the ferroelectric layer has a bottommost surface below the uppermost surface of the first metal layer.
5 more elements
Dependencies are inferred from the claim text.