Imaging device

An imaging device, comprising:

• a first substrate that has a pixel having a photodiode, and a floating diffusion that holds a charge converted by the photodiode;
• a second substrate that has a pixel circuit and is stacked on the first substrate, the pixel circuit reading a pixel signal based on the charge held in the floating diffusion in the pixel;
• a wire that electrically connects the floating diffusion in the first substrate to an amplification transistor in the pixel circuit of the second substrate;
• and is formed in the first substrate and the second substrate;
• and
• a shield wire that electrically connects a gate of the amplification transistor and a source of the amplification transistor in a state where a well layer of the pixel circuit and a well layer of the amplification transistor in the pixel circuit are electrically isolated from each other, and shields the wire while running in parallel with the wire, wherein a coupling capacitance between the wire and the shield wire is larger than a coupling capacitance between the wire and another wire.

An imaging device, comprising:

• a first substrate that has a pixel having a photodiode, and a floating diffusion that holds a charge converted by the photodiode;
• a second substrate that has a pixel circuit and is stacked on the first substrate, the pixel circuit reading a pixel signal based on the charge held in the floating diffusion in the pixel;
• a wire that electrically connects the floating diffusion in the first substrate to an amplification transistor in the pixel circuit of the second substrate;
• and is formed in the first substrate and the second substrate;
• a shield wire that electrically connects a gate of the amplification transistor and a source of the amplification transistor in a state where a well layer of the pixel circuit and a well layer of the amplification transistor in the pixel circuit are electrically isolated from each other, and shields the wire while running in parallel with the wire;
• and
• a column signal processing unit that is connected to a plurality of the pixel circuits through a plurality of vertical signal lines,
• wherein the column signal processing unit includes an AD converter performing AD conversion on a basis of a reference signal, and a load circuit, and outputs pixel data according to a voltage of the vertical signal line.

An imaging device, comprising:

• a first substrate that has a pixel having a photodiode, and a floating diffusion that holds a charge converted by the photodiode;
• a second substrate that has a pixel circuit and is stacked on the first substrate, the pixel circuit reading a pixel signal based on the charge held in the floating diffusion in the pixel;
• a wire that electrically connects the floating diffusion in the first substrate to an amplification transistor in the pixel circuit of the second substrate;
• and is formed in the first substrate and the second substrate;
• a shield wire that electrically connects a gate of the amplification transistor and a source of the amplification transistor in a state where a well layer of the pixel circuit and a well layer of the amplification transistor in the pixel circuit are electrically isolated from each other, and shields the wire while running in parallel with the wire;
• and
• a column signal processing unit that is connected to a plurality of the pixel circuits through a plurality of vertical signal lines,
• wherein the column signal processing unit includes
• a RAMP generation circuit that generates and outputs a RAMP waveform,
• a comparator that compares a voltage of a pixel signal read through the vertical signal line with a voltage of the RAMP waveform,
• a counter that performs counting on a basis of a comparison result signal of the comparator, and
• a latch that outputs pixel data on the basis of a count value of the counter.