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US 11,901,387 B2Granted
Image sensor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMin-Feng Kao, Dun-Nian Yaung, Jen-Cheng Liu, Wen-Chang Kuo, Sheng-Chau Chen, Feng-Chi Hung, Sheng-Chan Li
Life of this patent
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Abstract
A semiconductor device according to the present disclosure includes a semiconductor layer, a plurality of metal isolation features disposed in the semiconductor layer, a metal grid disposed directly over the plurality of metal isolation features, and a plurality of microlens features disposed over the metal grid.
Claims20
A semiconductor device, comprising:
- a semiconductor layer comprising a first surface and a second surface opposing the first surface;
- a plurality of dielectric isolation features disposed within the semiconductor layer and adjacent the first surface of the semiconductor layer;
- a plurality of metal isolation features extending from the second surface of the semiconductor layer;
- a metal grid disposed directly over and in contact with the plurality of metal isolation features;
- a plurality of microlens features disposed over the metal grid;
- and
- a first dielectric layer extending continuously along the second surface of the semiconductor layer, between the semiconductor layer and the plurality of metal isolation features, and between each of the plurality of metal isolation features and one of the plurality of dielectric isolation features.
4 more elements
An image sensor, comprising:
- a first deep trench isolation (DTI) feature and a second DTI feature;
- a photodetector disposed between the first DTI feature and the second DTI feature;
- a metal grid disposed on and in direct contact with the first DTI feature and the second DTI feature;
- and
- a bias source electrically coupled the metal grid,
- wherein the first DTI feature, the second DTI feature and the metal grid comprise aluminum,
- wherein the bias source and the metal grid are configured to apply a negative bias to the first DTI feature and the second DTI feature.
4 more elements
A structure, comprising:
- a substrate;
- a first deep trench isolation (DTI) feature and a second DTI feature extending into the substrate;
- a metal oxide layer disposed between the first DTI feature and the substrate as well as between the second DTI feature and the substrate;
- a metal grid disposed on and in direct contact with the first DTI feature and the second DTI feature;
- and
- a first dielectric layer between the metal oxide layer and the first DTI feature as well as between the metal oxide layer and the second DTI feature,
- wherein the first dielectric layer comprises tantalum oxide (Ta2O5), titanium oxide, zirconium oxide, or a combination thereof.
4 more elements
Dependencies are inferred from the claim text.