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US 11,901,386 B2Granted
Image sensor having a sloped light blocking pattern structure
AssigneeSamsung Electronics Co., Ltd.
InventorsKyeong Jae Byeon, Byung Jun Park, Jin Pyo Kim
Life of this patent
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Abstract
An image sensor includes a first region and a second region surrounding the first region. A substrate includes a first surface and a second surface that is opposite to the first surface. A photoelectric conversion element is disposed on the substrate. A passivation layer is disposed on the first surface of the substrate. A microlens is disposed on the passivation layer in the first region and is not disposed on the passivation layer in the second region. A pattern structure is disposed on an upper surface of the passivation layer in the second region. The pattern structure includes a metal and has at least one lateral side wall having a sloped profile.
Claims15
An image sensor comprising:
- a first region and a second region surrounding the first region;
- a substrate including a first surface and a second surface that is opposite to the first surface;
- a photoelectric conversion element disposed on the substrate;
- a passivation layer disposed on the first surface of the substrate;
- a microlens disposed on the passivation layer in the first region, the microlens is not disposed on the passivation layer in the second region;
- and
- a pattern structure disposed on an upper surface of the passivation layer in the second region, the pattern structure includes a metal and has at least one lateral side wall having a sloped profile that slopes towards the first region,
- wherein a first lateral sidewall of the at least one lateral side wall of the pattern structure has a convex surface shape curving outwardly towards the first region, and
- wherein an uppermost surface of the first lateral sidewall is disposed farther away from the first region than all other surfaces of the first lateral sidewall and a lowermost surface of the first lateral sidewall is disposed closest to the first region than all other surfaces of the first lateral sidewall.
6 more elements
An image sensor comprising:
- a first region and a second region surrounding the first region;
- a substrate including a first surface and a second surface that is opposite to the first surface;
- a photoelectric conversion element disposed inside the substrate in each of the first and second regions;
- a microlens disposed on the first surface of the substrate in the first region, the microlens is not disposed on the first surface of the substrate in the second region;
- and
- a pattern structure disposed on the first surface of the substrate in the second region, the pattern structure including at least one lateral side wall having a sloped profile that slopes towards the first region,
- wherein the pattern structure includes a first layer and a second layer disposed on the first layer, the first layer and the second layer including different metals from each other,
- wherein a first lateral sidewall of the at least one lateral side wall of the pattern structure has a convex surface shape curving outwardly towards the first region, and
- wherein an uppermost surface of the first lateral sidewall is disposed farther away from the first region than all other surfaces of the first lateral sidewall and a lowermost surface of the first lateral sidewall is disposed closest to the first region than all other surfaces of the first lateral sidewall.
6 more elements
An image sensor comprising:
- a first region and a second region surrounding the first region;
- a substrate including a first surface and a second surface that is opposite to the first surface;
- a photoelectric conversion element disposed inside the substrate in each of the first and second regions;
- a passivation layer disposed on the first surface of the substrate;
- a microlens disposed on the first surface of the substrate in the first region, the microlens is not disposed on the first surface of the substrate in the second region;
- and
- a pattern structure disposed on the passivation layer in the second region, the pattern structure including a first layer and a second layer disposed on the first layer,
- wherein at least one lateral side wall of each of the first layer and the second layer have a sloped profile that slopes towards the first region, and the first layer and the second layer include different metals from each other,
- wherein a first lateral sidewall of the at least one lateral side wall of the pattern structure has a convex surface shape curving outwardly towards the first region, and
- wherein an uppermost surface of the first lateral sidewall is disposed farther away from the first region than all other surfaces of the first lateral sidewall and a lowermost surface of the first lateral sidewall is disposed closest to the first region than all other surfaces of the first lateral sidewall.
7 more elements
Dependencies are inferred from the claim text.