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US 11,901,381 B2Granted
Image sensor
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsFrancois Roy, Andrej Suler
Life of this patent
Estimating the term…
Abstract
The present disclosure concerns an image sensor including a plurality of pixels, each including: a doped photosensitive region of a first conductivity type extending vertically in a semiconductor substrate; a charge collection region more heavily doped with the first conductivity type than the photosensitive region, extending vertically in the substrate from an upper surface of the substrate and being arranged above the photosensitive region; and a vertical stack including a vertical transfer gate and a vertical electric insulation wall, the stack crossing the substrate and being in contact with the charge collection region, the gate being arranged on the upper surface side of the substrate and penetrating into the substrate deeper than the charge collection region.
Claims16
An image sensor comprising a plurality of pixels, each including:
- a doped photosensitive region of a first conductivity type extending vertically in a semiconductor substrate;
- a first charge collection region more heavily doped with the first conductivity type than the doped photosensitive region, the first charge collection region extending vertically in the substrate from an upper surface of the substrate and being arranged above the doped photosensitive region;
- a vertical stack that includes a vertical transfer gate and a vertical electric insulation wall, the stack crossing the substrate and being in contact with the first charge collection region, the vertical transfer gate being arranged at the upper surface of the substrate and penetrating into the substrate deeper than the first charge collection region, wherein the vertical transfer gate includes a gate electrode and a gate dielectric that are arranged on the vertical electric insulation wall;
- and
- a vertical electric insulation structure crossing the substrate and laterally delimiting the doped photosensitive region and the pixel, wherein the vertical electric insulation wall is a portion of the vertical electric insulation structure.
2 more elements
An imaging pixel, comprising:
- a doped photosensitive region of a first conductivity type in a semiconductor substrate;
- a first charge collection region more heavily doped with the first conductivity type than the doped photosensitive region, the first charge collection region extending in the substrate from an upper surface of the substrate and being arranged above the doped photosensitive region;
- a vertical stack that includes a vertical transfer gate and a vertical electric insulation wall, the stack crossing the substrate and being in contact with the first charge collection region, the vertical transfer gate being arranged at the upper surface of the substrate and penetrating into the substrate deeper than the first charge collection region, wherein the vertical transfer gate includes a gate electrode and a gate dielectric that are arranged on the vertical electric insulation wall;
- a vertical electric insulation structure crossing said substrate and dividing the doped photosensitive region in first and second halves;
- and
- a second charge collection region more heavily doped with the first conductivity type than the doped photosensitive region, extending in the substrate from the upper surface, the first and second charge collection regions of the pixel being arranged respectively above the first and second halves of the doped photosensitive region.
3 more elements
An image sensor comprising a plurality of pixels, each including:
- a doped photosensitive region of a first conductivity type extending vertically in a semiconductor substrate;
- a first charge collection region more heavily doped with the first conductivity type than the doped photosensitive region, the first charge collection region extending vertically in the substrate from an upper surface of the substrate and being arranged above the doped photosensitive region;
- a vertical stack that includes a vertical transfer gate and a vertical electric insulation wall, the stack crossing the substrate and being in contact with the first charge collection region, the vertical transfer gate being arranged at the upper surface of the substrate and penetrating into the substrate deeper than the first charge collection region,
- wherein the vertical transfer gate includes a gate electrode and a gate dielectric that are arranged on the vertical electric insulation wall,
- wherein the vertical transfer gate of each stack is common to two neighboring pixels, the stack being in contact with the first charge collection region of the two neighboring pixels.
2 more elements
An imaging pixel, comprising:
- a doped photosensitive region of a first conductivity type in a semiconductor substrate;
- a first charge collection region more heavily doped with the first conductivity type than the doped photosensitive region, the first charge collection region extending in the substrate from an upper surface of the substrate and being arranged above the doped photosensitive region;
- and
- a vertical stack that includes a vertical transfer gate and a vertical electric insulation wall, the stack crossing the substrate and being in contact with the first charge collection region, the vertical transfer gate being arranged at the upper surface of the substrate and penetrating into the substrate deeper than the first charge collection region, wherein the vertical transfer gate includes a gate electrode and a gate dielectric that are arranged on the vertical electric insulation wall;
- a vertical electric insulation structure crossing the substrate and laterally delimiting the doped photosensitive region and the pixel, wherein the vertical electric insulation structure is interrupted along its entire height, successively by a portion of the substrate, the stack, and another portion of the substrate.
2 more elements
Dependencies are inferred from the claim text.