Semiconductor packages and methods for forming the same

A method for forming a semiconductor package, comprising:

• bonding directly a first interconnect structure of a first integrated circuit die with an interconnect structure of a second integrated circuit die;
• bonding directly the second integrated circuit die to a substrate such that a sidewall of the first integrated circuit die is surrounded by the substrate, wherein the substrate has an opening extending through the entire thickness of the substrate, wherein the opening is sized to allow the circumference of the first integrated circuit die in the opening;
• and
• bonding the substrate to a printed circuit board, wherein the first integrated circuit die is exposed to air.

A method for forming a semiconductor package, comprising:

• providing a plurality of first integrated circuit dies each having a first circuit design, wherein each first integrated circuit die comprises a first device layer and a first interconnect structure;
• providing a second integrated circuit die onto a wafer, wherein the second integrated circuit die has a second circuit design different than the first circuit design, and the second integrated circuit die comprises a second device layer and a second interconnect structure;
• bonding the second integrated circuit die with the plurality of first integrated circuit dies so that a first side of the second interconnect structure is in contact with the second device layer and a second side is in direct contact with the first interconnect structure of the first integrated circuit die;
• cutting the wafer into individual pieces each having at least one first integrated circuit die bonded to the second integrated circuit die;
• and
• bonding a substrate to the second integrated circuit die such that the first integrated circuit die is surrounded by at least a portion of the substrate, wherein the substrate has an opening extending through the entire thickness of the substrate, wherein the opening is sized to allow the circumference of the first integrated circuit die in the opening.