Discontinuous patterned bonds for semiconductor devices and associated systems and methods

A semiconductor device, comprising:

• a silicon substrate having a front surface and a back surface opposite the front surface, wherein the front surface includes a recess defined by a bottom surface situated between the front surface and the back surface and by sidewalls surrounding the recess;
• a first layer of bonding material disposed in direct contact with a bottom surface of the recess and with the sidewalls;
• a second layer of bonding material directly bonded to the first layer of bonding material and spaced laterally apart from one or more of the sidewalls;
• and
• a solid state transducer directly bonded to the second layer of bonding material spaced laterally apart from one or more of the sidewalls.

A semiconductor device, comprising:

• a silicon substrate having a front surface and a back surface opposite the front surface, wherein the front surface includes a recess defined by a bottom surface situated between the front surface and the back surface and by sidewalls surrounding the recess;
• a first layer of bonding material disposed in direct contact with a bottom surface of the recess and with the sidewalls;
• a second layer of bonding material directly bonded to the first layer of bonding material and not in contact with any of the sidewalls;
• and
• a solid state transducer directly bonded to the second layer of bonding material and not in contact with any of the sidewalls.