Microelectronic devices including embedded bridge interconnect structures
AssigneeMicron Technology, Inc.
InventorShing-Yih Shih
Life of this patent
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Abstract
A semiconductor package includes a resin molded package substrate comprising a resin molded core, a plurality of metal vias in the resin molded core, a front-side RDL structure, and a back-side RDL structure. A bridge TSV interconnect component is embedded in the resin molded core. The bridge TSV interconnect component has a silicon substrate portion, an RDL structure integrally constructed on the silicon substrate portion, and TSVs in the silicon substrate portion. A first semiconductor die and a second semiconductor die are mounted on the front-side RDL structure. The first semiconductor die and the second semiconductor die are coplanar.
Claims20
A microelectronic device, comprising:
- a molded core comprising a single layer of a single molding compound;
- a first redistribution layer located directly on a first side of the molded core;
- a second redistribution layer located directly on a second, opposite side of the molded core;
- metal vias embedded in the molded core and extending directly between the first redistribution layer and the second redistribution layer;
- a bridge interconnect structure comprising:
- a third redistribution layer embedded in the molded core, portions of the single molding compound vertically intervening directly between the third redistribution layer and the first redistribution layer;
- and
- a base structure comprising through-silicon-vias;
- and
- at least one die mounted on the first redistribution layer, the at least one die electrically connected to the second redistribution layer through the first redistribution layer and the metal vias, and the at least one die separately electrically connected to the second redistribution layer through the first redistribution layer and the bridge interconnect structure.
A microelectronic device, comprising:
- a first redistribution layer;
- a second redistribution layer;
- a molded core comprising a single layer of a single molding compound located between and directly contacting each of the first redistribution layer and the second redistribution layer;
- metal vias extending directly between the first redistribution layer and the second redistribution layer through the molded core;
- a bridge interconnect structure embedded in the molded core, the bridge interconnect structure comprising an embedded redistribution layer and a base comprising through-silicon-vias, the single molding compound in physical contact with the bridge interconnect structure on at least two consecutive sides thereof;
- connecting elements extending directly between the first redistribution layer and the embedded redistribution layer of the bridge interconnect structure;
- and
- at least one die mounted on the first redistribution layer, wherein the first redistribution layer and the metal vias of the molded core provide a first electrical pathway between the at least one die and the second redistribution layer, and wherein the first redistribution layer, the connecting elements, and the bridge interconnect structure provide a second, separate electrical pathway between the at least one die and the second redistribution layer.
Dependencies are inferred from the claim text.