Multilayer substrate

A multilayer substrate comprising:

• semiconductor substrates each having a through hole of a plurality of through holes and a plated film on an inner surface thereof, the semiconductor substrates being laminated to each other, wherein:
• a particle group formed from a plurality of adjacent conductive particles is present at least at a position where a first pair of the through holes face each other as viewed in a first direction corresponding to a plan view of the multilayer substrate, and
• the multilayer substrate has a connection structure in which the first pair of the through holes are connected by the particle group, and the semiconductor substrates are bonded together by an insulating adhesive, wherein
• the conductive particles in the particle group are disposed in a plane direction of the insulating adhesive,
• a first conductive particle in the particle group includes a first surface directly contacting the insulating adhesive, the first surface protruding convexly towards the insulating adhesive as viewed in a second direction, and
• the second direction is perpendicular to the first direction.

A method for manufacturing a multilayer substrate in which through holes, each having a plated film on an inner surface thereof, are formed in semiconductor substrates which are faced and laminated to each other, the method comprising:

• putting a particle group between each of the semiconductor substrates, each semiconductor substrate having a through hole of the through holes, the particle group formed from a plurality of adjacent conductive particles, wherein each conductive particle in the particle group includes a metal coating and a core resin material, each conductive particle corresponding to a position where at least a first pair of the through holes face each other as viewed in a first direction corresponding to a plan view of the multilayer substrate such that the multilayer substrate has a connection structure in which the first pair of the through holes is connected by the particle group, and the semiconductor substrates are bonded together by an insulating adhesive anisotropic conductive film;
• and
• pressurizing the connection structure under heating to achieve an anisotropic conductive connection of the semiconductor substrates such that a first conductive particle in the particle group includes a first surface directly contacting the insulating adhesive and the first surface protrudes convexly towards the insulating adhesive as viewed in a second direction, wherein the second direction is perpendicular to the first direction.