Semiconductor package system and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHui-Min Huang, Chih-Wei Lin, Tsai-Tsung Tsai, Ming-Da Cheng, Chung-Shi Liu, Chen-Hua Yu
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Abstract
A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a first surface, wherein the first surface comprises a protective material and an encapsulating material, wherein the protective material extends a first distance from the first surface to a second surface opposite the first surface and wherein the encapsulating material extends a second distance from the first surface to a third surface opposite the first surface, the second distance being greater than the first distance, wherein a semiconductor die is in physical contact with the second surface of the protective material and wherein the semiconductor die extends a third distance from the second surface to a fourth surface facing away from the second surface, wherein the second distance is at least as large as a sum of the first distance and the third distance, wherein the protective material has a first width and the semiconductor die has a second width greater than the first width;
- and
- forming a conductive material extending over both the protective material and the encapsulating material, the conductive material also extending through the protective material to be in electrical contact with the semiconductor die, wherein the conductive material comprises a seed layer.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first through via;
- after the forming the first through via, encapsulating a first semiconductor device, a first through via, and a protective layer with an encapsulant;
- depositing a seed layer through the protective layer to form a first surface with the first semiconductor device, the seed layer also being deposited on a second surface of the encapsulant;
- depositing a conductive material on the seed layer, wherein the conductive material is in electrical connection with both the first semiconductor device through the first surface and the first through via through the second surface;
- covering the conductive material with a dielectric material;
- and
- forming a conductive contact through the dielectric material.
A method of manufacturing a semiconductor device, the method comprising:
- placing an encapsulant around a first semiconductor die and a protective layer, the encapsulant having a non-planar surface facing the protective layer and the first semiconductor die;
- depositing a seed layer through the protective layer to be in physical contact with the first semiconductor die and extending over the encapsulant;
- plating a conductive material onto the seed layer, the conductive material having a first portion over the encapsulant and a second portion within the protective layer;
- forming a contact to the first portion of the conductive material;
- forming an external connector to the contact;
- and
- planarizing the encapsulant with the protective layer.
Dependencies are inferred from the claim text.