Method for fabricating semiconductor structure having alignment mark feature
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Hung Lee, Chih-Fei Lee, Fu-Cheng Chang, Ching-Hung Kao
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Abstract
A method of fabricating a semiconductor structure includes forming an alignment mark layer on a substrate; patterning the alignment mark layer for forming at least one alignment mark feature; forming a bottom conductive layer on the patterned alignment mark layer in a substantially conformal manner; forming an insulator layer on the bottom conductive layer; and forming a top conductive layer on the insulator layer.
Claims20
A method of fabricating a semiconductor structure, comprising:
- forming an alignment mark layer over a substrate;
- patterning the alignment mark layer to define a first alignment mark feature and a second alignment mark feature from the alignment mark layer;
- and
- forming a bottom conductive layer over the first alignment mark feature and the second alignment mark feature and between the first alignment mark feature and the second alignment mark feature.
A method of fabricating a semiconductor structure, comprising:
- forming a conductive feature over a substrate, wherein:
- the substrate defines a product region and an alignment region, and
- the conductive feature is disposed in the product region;
- forming a dielectric layer in the alignment region and over the conductive feature in the product region;
- forming an alignment mark layer in the alignment region;
- patterning the alignment mark layer to define a first alignment mark feature in the alignment region;
- and
- forming a bottom conductive layer, wherein:
- the dielectric layer is between the bottom conductive layer and the substrate in the product region, and
- the first alignment mark feature is between the bottom conductive layer and the substrate in the alignment region.
A method of fabricating a semiconductor structure, comprising:
- forming an alignment mark layer over a dielectric layer;
- patterning the alignment mark layer to define a first alignment mark feature and a second alignment mark feature from the alignment mark layer, wherein a portion of the alignment mark layer remains between the first alignment mark feature and the second alignment mark feature after patterning the alignment mark layer;
- and
- forming a bottom conductive layer over the first alignment mark feature, the second alignment mark feature, and the portion of the alignment mark layer between the first alignment mark feature and the second alignment mark feature.
Dependencies are inferred from the claim text.