Die interconnect substrate, an electrical device and a method for forming a die interconnect substrate

A die interconnect substrate, comprising:

• a bridge die having a top side above a bottom side, and a first sidewall and a second sidewall between the top side and the bottom side, the first sidewall laterally opposite the second sidewall, the bridge die having a bridge die pad;
• a first conductive structure laterally spaced apart from the first sidewall of the bridge die;
• an insulating filler structure laterally between the substrate interconnect and the bridge die, the insulating filler structure in contact with the first sidewall of the bridge die;
• an insulating layer on and in direct contact with the substrate interconnect, on the insulating filler structure, and on the bridge die pad;
• a first metallization layer comprising a second conductive structure in a first opening in the insulating layer, the second conductive structure on the first conductive structure, and the first metallization layer comprising a via portion in a second opening in the insulating layer, the via portion on the bridge die pad;
• a second metallization layer above the first metallization layer, the second metallization layer comprising a first conductive wiring on the second conductive structure and on the insulating layer, and the second metallization layer comprising a second conductive wiring on the via portion and on the insulating layer;
• and
• a third metallization layer above the second metallization layer, the third metallization layer comprising a first contact interface structure on the first conductive wiring, and the third metallization layer comprising a second contact interface structure on the second conductive wiring.

A method of fabricating a die interconnect substrate, the method comprising:

• providing a bridge die having a top side above a bottom side, and a first sidewall and a second sidewall between the top side and the bottom side, the first sidewall laterally opposite the second sidewall, the bridge die having a bridge die pad;
• forming a substrate interconnect laterally spaced apart from the first sidewall of the bridge die;
• forming an insulating filler structure laterally between the substrate interconnect and the bridge die, the insulating filler structure in contact with the first sidewall of the bridge die;
• forming an insulating layer on and in direct contact with the substrate interconnect, on the insulating filler structure, and on the bridge die;
• forming a vertical wiring layer in a first opening in the insulating layer, the vertical wiring layer on the substrate interconnect;
• forming a first lateral wiring layer on the vertical wiring layer and on the insulating layer;
• forming a first contact interface structure on the first lateral wiring layer;
• forming a via portion in a second opening in the insulating layer, the via portion on the bridge die pad;
• forming a second lateral wiring layer on the via portion and on the insulating layer;
• and
• forming a second contact interface structure on the second lateral wiring layer.