Capacitor and method for forming the same

A method, comprising:

• forming a bottom electrode routing over a semiconductor substrate;
• forming a capacitor structure over the bottom electrode routing, the capacitor structure comprising a bottom metal layer, a middle metal layer above the bottom metal layer, and a top metal layer above the middle metal layer, wherein when viewed in a plan view, the top metal layer has opposite straight edges extending along a first direction and opposite square wave-shaped edges connecting the opposite straight edges, the square wave-shaped edges each comprise alternating first and second segments extending along a second direction perpendicular to the first direction, and third segments each connecting adjacent two of the first and second segments, wherein the third segments extend along the first direction;
• forming a top electrode routing over the capacitor structure;
• forming a first metal via extending from the bottom electrode routing to the top electrode routing, the first metal via contacting the top and bottom metal layers and spaced apart from the middle metal layer;
• and
• forming a second metal via extending from the bottom electrode routing to the top electrode routing, the second metal via contacting the middle metal layer and spaced apart from the bottom and top metal layers.

A method, comprising:

• forming a first electrode routing over a semiconductor substrate;
• forming a capacitor structure over the first electrode routing, the capacitor structure comprising a first metal plate serving to receive a first voltage potential and having opposite linear edges extending along a first direction, and a second metal plate over the first metal plate, the second metal plate serving to receive a second voltage potential different than the first voltage potential, the second metal plate having opposite linear edges extending along the first direction, wherein a first distance between the opposite linear edges of the first metal plate is different than a second distance between the opposite linear edges of the second metal plate, the first metal plate has a non-linear edge connecting the linear edges of the first metal plate, and the non-linear edge of the first metal plate has a plurality of notches arranged along a second direction perpendicular to the first direction;
• and
• forming a second electrode routing over the capacitor structure, wherein the capacitor structure is connected between the first and second electrode routings.