Power module with press-fit contacts
AssigneeInfineon Technologies AG
InventorsIvan Nikitin, Peter Luniewski
Life of this patent
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Abstract
A method of forming a semiconductor device includes providing a substrate that comprises a metal region, forming an encapsulant body of electrically insulating material on an upper surface of the metal region, forming an opening in the encapsulant body, and inserting a press-fit connector into the opening, wherein after inserting the press-fit connector into the opening, the press-fit connector is securely retained to the substrate and an interfacing end of the press-fit connector is electrically accessible.
Claims18
A method of forming a semiconductor device, the method comprising:
- providing a substrate that comprises a metal region;
- forming an encapsulant body of electrically insulating material on an upper surface of the metal region;
- forming an opening in the encapsulant body;
- and
- inserting a press-fit connector into the opening;
- wherein after inserting the press-fit connector into the opening, the press-fit connector is securely retained to the substrate and an interfacing end of the press-fit connector is electrically accessible,
- wherein the encapsulant body is formed by a molding process whereby liquified mold material is formed on the substrate and subsequently hardened, wherein forming the opening comprises arranging a fixed pin over the substrate prior to the molding process, and wherein the fixed pin prevents the liquified mold material from forming at a location corresponding to the opening.
A semiconductor device, comprising:
- a substrate that comprises a metal region;
- an encapsulant body of electrically insulating material on an upper surface of the metal region;
- an opening in the encapsulant body;
- a press-fit connector arranged in the opening and securely retained to the substrate such that an interfacing end of the press-fit connector is electrically accessible;
- and
- a recess in the upper surface of the metal region, and wherein the opening is directly over the opening and is larger than the recess such that the recess is completely exposed by the opening.
Dependencies are inferred from the claim text.