Thermoelectric semiconductor device and method of making same
AssigneeWestern Digital Technologies, Inc.
InventorsJiandi Du, Yazhou Zhang, Binbin Zheng, Sundarraj Chandran, Wenbin Qu, Chin-Tien Chiu
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Abstract
A thermoelectric semiconductor device includes a heat dissipating semiconductor module and a stack of flash memory dies mounted on a substrate. The heat dissipating module comprises a first semiconductor die such as a controller, and a second semiconductor die such as a thermoelectric semiconductor die to cool the first semiconductor die during operation. The thermoelectric semiconductor die may be mounted to the controller die at the wafer level.
Claims20
A method of forming a heat dissipating semiconductor wafer, comprising the steps of:
- forming a first group of semiconductor dies on the heat dissipating semiconductor wafer, the first group of semiconductor dies being thermoelectric semiconductor dies, by the step of doping p-n regions at least in areas of the heat dissipating semiconductor wafer defining the first group of semiconductor dies such that a temperature gradient or voltage potential between first and second surfaces of a semiconductor die of the first group of semiconductor dies results in migration of charge carriers between the first and second surfaces of the semiconductor die;
- wherein the heat dissipating semiconductor wafer is configured to be bonded to a second semiconductor wafer having a second group of semiconductor dies such that the first group of semiconductor dies align with the second group of semiconductor dies upon joining of the first and second semiconductor wafers.
A method of forming a thermoelectric semiconductor device, comprising the steps of:
- aligning a first group of semiconductor dies from a first wafer to a second group of semiconductor dies from a second wafer;
- and
- joining the first and second semiconductor wafers;
- wherein the second group of semiconductor dies from the second wafer comprise thermoelectric semiconductor dies formed by doping p-n regions at least in areas of the second wafer defining the second group of semiconductor dies such that a temperature gradient or voltage potential between first and second surfaces of a semiconductor die of the second group of semiconductor dies results in migration of charge carriers between the first and second surfaces thereof.
A method of forming a thermoelectric semiconductor device, comprising the steps of:
- attaching a heat dissipating semiconductor module to a substrate, the heat dissipating semiconductor module comprising a controller die and a thermoelectric semiconductor die, the thermoelectric semiconductor die being doped with p-n regions such that a temperature gradient or voltage potential between first and second surfaces of the thermoelectric semiconductor die results in cooling of the controller die;
- attaching one or more flash memory dies to the substrate adjacent to the heat dissipating semiconductor module;
- electrically coupling the heat dissipating semiconductor module to the substrate;
- and
- electrically coupling the one or more flash memory dies to the substrate, wherein the substrate facilitates electrical communication between the controller die and the one or more flash memory dies.
Dependencies are inferred from the claim text.