Semiconductor device, semiconductor package, and methods of manufacturing the same

A semiconductor package, comprising:

• a circuit structure;
• a semiconductor device, located on and electrically connected to the circuit structure, and comprising:
• a substrate having a first portion, a second portion and a third portion connecting the first portion and the second portion, wherein a vertical size of the first portion of the substrate is greater than a vertical size of the second portion of the substrate along the stacking direction of the first portion, the second portion and the third portion;
• an interconnect structure, located on the first portion of the substrate;
• and
• conductive vias, located on the interconnect structure, wherein the interconnect structure is located between the conductive vias and the substrate;
• and
• an insulating material, located between the semiconductor device and the circuit structure, wherein the insulating material further extends onto the first portion of the substrate.

A method of manufacturing a semiconductor device, comprising:

• providing a wafer comprising a wafer substrate, an interconnect structure located on the wafer substrate and conductive vias connected to the interconnect structure, the interconnect structure being located between the wafer substrate and the conductive vias, and the wafer substrate comprising a first sub-portion, a second sub-portion and a third sub-portion connecting therebetween;
• performing a first cutting step to form a first trench penetrating through the interconnect structure and further extending through the first sub-portion and the third sub-portion of the wafer substrate;
• and
• performing a second cutting step to form a second trench penetrating through a second sub-portion of the wafer substrate so to form a semiconductor device comprising a substrate having a sidewall comprising a first planar sidewall of a first portion of the substrate, a second planar sidewall of a second portion of the substrate and a curved sidewall of a third portion of the substrate, wherein the first planar sidewall is connected to the second planar sidewall through the curved sidewall.