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US 11,901,255 B2Granted
Semiconductor device and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Chien Pan, Chin-Fu Kao, Li-Hui Cheng, Szu-Wei Lu
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Abstract
A method of forming a semiconductor device includes attaching a first semiconductor device to a first surface of a substrate; forming a sacrificial structure on the first surface of the substrate around the first semiconductor device, the sacrificial structure encircling a first region of the first surface of the substrate; and forming an underfill material in the first region.
Claims20
A semiconductor structure comprises:
- a substrate;
- a semiconductor device bonded to an upper surface of the substrate;
- and
- an underfill material around the semiconductor device and between the substrate and the semiconductor device, wherein a fillet of the underfill material has a first portion distal from the substrate and has a second portion between the first portion and the substrate, wherein a first sidewall of the first portion extends away from a first sidewall of the semiconductor device as the first portion extends toward the substrate, and a second sidewall of the second portion extends parallel to the first sidewall of the semiconductor device.
1 more element
A semiconductor structure comprises:
- a substrate;
- a semiconductor device attached to a first surface of the substrate;
- and
- an underfill material filling a gap between the substrate and the semiconductor device, wherein a fillet of the underfill material has a first portion distal from the substrate, a second portion proximate to the substrate, and a third portion between the first portion and the second portion, wherein a first sidewall of the first portion is slanted with respect to the first surface of the substrate, wherein a second sidewall of the second portion is slanted with respect to the first surface of the substrate, wherein a third sidewall of the third portion is perpendicular to the first surface of the substrate.
1 more element
A semiconductor structure comprises:
- a substrate;
- a semiconductor device attached to a first side of the substrate;
- and
- an underfill material around the semiconductor device and between the substrate and the semiconductor device, wherein a fillet of the underfill material has a first portion distal from the substrate and has a second portion contacting substrate, wherein a first width of the first portion increases as the first portion extends toward the substrate, and a second width of the second portion decreases as the second portion extends toward the substrate.
1 more element
Dependencies are inferred from the claim text.