Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsChih-Kai Hsu, Ssu-I Fu, Chun-Ya Chiu, Chi-Ting Wu, Chin-Hung Chen, Yu-Hsiang Lin
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Abstract
A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.
Claims12
A semiconductor device, comprising:
- a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion;
- a first isolation structure on top of the SDB structure;
- a first spacer adjacent to and directly contacting the first isolation structure, wherein a top surface of the first spacer is lower than a top surface of the first isolation structure;
- a metal gate adjacent to the first isolation structure, wherein a bottom surface of the first spacer is lower than a bottom surface of the metal gate;
- a shallow trench isolation (STI) around the fin-shaped structure;
- and
- a second isolation structure on the STI.
Dependencies are inferred from the claim text.