Method of manufacturing semiconductor element and semiconductor element

A method of manufacturing a semiconductor element, comprising:

• providing a substrate having a first surface and a second surface;
• performing a first irradiation step comprising irradiating a laser beam from a first surface side to an interior of the substrate along a first direction parallel to the first surface, so as to form a plurality of first modified portions aligned along the first direction in the interior of the substrate, and a crack extending from at least one of the plurality of first modified portions toward at least the first surface;
• after performing the first irradiation step, performing a second irradiation step comprising irradiating a laser beam from the first surface side to a position shifted from the first modified portions in a second direction intersecting with the first direction and parallel to the first surface, so as to form a plurality of second modified portions aligned along the first direction at a position adjacent to the plurality of first modified portions in the second direction;
• after performing the second irradiation step, performing a third irradiation step comprising irradiating a laser beam from the first surface side along the first direction, so as to form a plurality of third modified portions aligned along the first direction at a position that (i) is closer to the first surface than is the plurality of first modified portions and (ii) overlaps the plurality of first modified portions in a thickness direction of the substrate;
• and
• after performing the third irradiation, cutting the substrate, which comprises pressing the substrate from a second surface side with a pressing member,
• wherein no modified portion is formed at a position that is (i) adjacent to the third modified portions in the second direction and (ii) overlaps the second modified portions in the thickness direction of the substrate.