US 11,901,230 B2 · Semiconductor package and manufacturing method thereof

Abstract

Semiconductor package includes substrate, first barrier layer, second barrier layer, routing via, first routing pattern, second routing pattern, semiconductor die. Substrate has through hole with tapered profile, wider at frontside surface than at backside surface of substrate. First barrier layer extends on backside surface. Second barrier layer extends along sidewalls of through hole and on frontside surface. Routing via fills through hole and is separated from sidewalls of through hole by at least second barrier layer. First routing pattern extends over first barrier layer on backside surface and over routing via. First routing pattern is electrically connected to end of routing via and has protrusion protruding towards end of routing via in correspondence of through hole. Second routing pattern extends over second barrier layer on frontside surface. Second routing pattern directly contacts another end of routing via. Semiconductor die is electrically connected to routing via by first routing pattern.

Claims13

Dependent claims

A manufacturing method of a semiconductor package, comprising:

ablating material from a first surface of a substrate to form a through hole in the substrate, the through hole opening at the first surface of the substrate and at a second surface opposite to the first surface;
plugging an end of the through hole at the second surface of the substrate;
sputtering a first barrier material on the substrate, from the side of the first surface, whereby the first barrier material is deposited on sidewalls and at the plugged end of the through hole;
sputtering a first seed material on the first barrier material;
plating a first conductive material on the first seed material while the through hole is still plugged;
unplugging the through hole to reveal at least a portion of the first barrier material at the end of the through hole;
etching the portion of the first barrier material at the end of the through hole;
and
plating a second conductive material on an opposite side of the first seed material with respect to the first conductive material.

6 more elements

A manufacturing method of a semiconductor package, comprising:

sputtering a first barrier material on a substrate having through holes extending from a frontside surface to a backside surface of the substrate, wherein the first barrier material reaches the substrate from the direction of the frontside surface;
bonding a backside film to the backside surface of the substrate before depositing the first barrier material, whereby one end of the through holes is closed by the backside film;
sputtering a first seed material on the first barrier material, wherein the first seed material reaches the substrate from the direction of the frontside surface;
disposing a first conductive material on the sputtered first seed material after the backside film is bonded to the substrate, whereby the first conductive material is disposed in the through holes and over the frontside surface of the substrate to form patterned conductive traces;
removing the backside film after the first conductive material is deposited;
removing portions of the first barrier material in correspondence of the through holes from the side of the backside surface of the substrate, while other portions of the first barrier material remain on the frontside surface of the substrate and along sidewalls of the through holes;
and
disposing a second conductive material to form routing patterns where the portions of the first barrier material have been removed.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor package and manufacturing method thereof

Life of this patent

Semiconductor package and manufacturing method thereof

Life of this patent

Abstract

Claims13