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US 11,901,226 B2Granted
Method for forming an interconnect structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorWen-Kuei Liu
Life of this patent
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Abstract
The present disclosure relates to a method of forming an interconnect structure. The method can include providing a semiconductor substrate; depositing a photoresist and a BARC layer on the semiconductor substrate; forming an opening in the photoresist and the BARC layer and a portion of the semiconductor substrate; depositing a conductive material to fill the opening; and planarizing the conductive material and the semiconductor substrate.
Claims20
A method, comprising:
- forming a photoresist comprising a bottom anti-reflective coating (BARC) material by introducing a conductive material into a photoresist polymer;
- depositing, on a semiconductor substrate, the photoresist comprising the BARC material to form a photoresist layer;
- forming an opening in the photoresist layer and a portion of the semiconductor substrate;
- depositing a conductive material in the opening and over the photoresist layer;
- and
- planarizing the conductive material and the semiconductor substrate.
3 more elements
A method, comprising:
- forming a photoresist comprising a bottom anti-reflective coating (BARC) material by introducing a conductive material into a photoresist polymer;
- disposing the photoresist comprising the BARC material on a semiconductor substrate to provide a photoresist and a BARC layer;
- forming an opening in the photoresist and the BARC layer and the semiconductor substrate;
- electroplating a conductive material in the opening and over the photoresist and the BARC layer;
- and
- planarizing the semiconductor substrate.
3 more elements
A method, comprising:
- forming a photoresist comprising a bottom anti-reflective coating (BARC) material by introducing a conductive material into a photoresist polymer;
- disposing, on a substrate, a photoresist layer comprising the photoresist comprising the BARC material;
- removing a portion of the substrate and the photoresist layer on the portion of the substrate to form a trench;
- disposing a barrier layer and a seed layer over the photoresist layer and in the trench;
- forming an interconnect structure over the barrier layer and the seed layer and in the trench;
- and
- planarizing the interconnect structure and the substrate.
4 more elements
Dependencies are inferred from the claim text.