Multi-step process for flowable gap-fill film

A method for semiconductor processing, the method comprising:

• transferring into a multi pressure processing chamber a substrate having thereon a film deposited by a flowable process;
• performing a first process at between 10 milliTorr and less than or equal to 1 Bar, within the processing chamber, on the film on the substrate, the first process comprising stabilizing bonds in the film to form a stabilized film, wherein the first process is one of at least a thermal oxidation process, a plasma oxidation process, a stabilizing thermal process, or a stabilizing plasma process performed at a temperature of between about 300° C. and about 1000° C., or a steam oxidation process;
• and performing a second process at greater than or equal to 1 Bar, within the multi pressure processing chamber, on the film on the substrate, the second process comprising densifying the stabilized film, wherein the second process is an anneal process performed at a temperature of between about 300° C. and about 1000° C.