US 11,901,220 B2 · Bilayer seal material for air gaps in semiconductor devices

Abstract

The present disclosure relates to a method for forming a semiconductor device includes forming an opening between first and second sidewalls of respective first and second terminals. The first and second sidewalls oppose each other. The method further includes depositing a first dielectric material at a first deposition rate on top portions of the opening and depositing a second dielectric material at a second deposition rate on the first dielectric material and on the first and second sidewalls. The second dielectric material and the first and second sidewalls entrap a pocket of air. The method also includes performing a treatment process on the second dielectric material.

Claims20

Dependent claims

A method for forming a semiconductor device, comprising:

forming a first sidewall structure by forming an L-shaped spacer on a sidewall of a gate structure;
forming a second sidewall structure by forming another spacer on a sidewall of a source/drain structure, wherein:
the second sidewall structure is opposite to the first sidewall structure, and
the first and second sidewall structures are formed of different layers and define boundaries of an opening;
depositing a first dielectric material at a first deposition rate on top portions of the opening;
depositing a second dielectric material at a second deposition rate on the first dielectric material and on the first and second sidewall structures, wherein the second dielectric material and the first and second sidewall structures entrap a pocket of air;
and
performing a treatment process on the second dielectric material.

5 more elements

Dependencies are inferred from the claim text.

Bilayer seal material for air gaps in semiconductor devices

Life of this patent

Bilayer seal material for air gaps in semiconductor devices

Life of this patent

Abstract

Claims20