Method of forming a porous portion in a substrate
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsShay Reboh, Pablo Acosta Alba
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Abstract
The invention relates to a method for forming a porous portion in a substrate, an implantation of ions in at least one region of a layer, for example based on a semiconductor material, so as to form a portion enriched with at least one gas in the implanted region, and then a laser annealing of the nanosecond type so as to form a porous portion. The use of the ion implantation makes it possible to dissociate the deposition of the layer based on semiconductor material from the incorporation of gas. A great variety of porous structures can be obtained by the method. These porous structures can be adapted for numerous applications according to the properties sought.
Claims20
A method for forming a porous portion in a substrate, the method comprising:
- provision of a substrate comprising a layer, and having a surface,
- an implantation of ions chosen from hydrogen ions and noble gas ions in at least one region of the layer, the implanted region being situated at an implantation depth in the layer, so as to form at least one portion enriched with at least one gas in the implanted region, and then
- a laser annealing of the nanosecond type so as to bring about, from the implanted region, at least one from among formation and development of a porous portion at the surface of the substrate, the porous portion comprising pores having an inner surface,
- wherein the laser annealing of the nanosecond type causes at least one from the formation and the development of a porous portion on the surface of the substrate, and
- wherein the method comprises a surface treatment of the porous portion comprising a thermal oxidation of the inner surface of the pores of the porous portion or a deposition of a dielectric material or of a semiconductor material, on said inner surface.
Dependencies are inferred from the claim text.