Fabrication method of device with cavity
AssigneeShenzhen Newsonic Technologies Co., Ltd.
InventorGuojun Weng
Life of this patent
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Abstract
A method for fabricating a device having a cavity, includes: obtaining a device wafer including a first substrate and a device structure formed on the first substrate, depositing a first dielectric layer on the device wafer, etching the first dielectric layer to expose at least a part of the device structure and a part of the first substrate, depositing, after the etching, a second dielectric layer on the device wafer and the first dielectric layer, performing a surface treatment on a surface of the second dielectric layer, obtaining a second substrate, and bonding the second substrate with the second dielectric layer on the device wafer, thereby forming the cavity between the second substrate and the device wafer.
Claims17
A method for fabricating a device having a cavity, comprising:
- obtaining a device wafer including a first substrate and a device structure formed on the first substrate;
- depositing a first dielectric layer on the device wafer;
- etching the first dielectric layer to expose the device structure and a portion of the first substrate;
- depositing, after the etching, a second dielectric layer on the device wafer and the first dielectric layer;
- performing a surface treatment on a surface of the second dielectric layer;
- obtaining a second substrate;
- and
- bonding the second substrate with the second dielectric layer on the device wafer, thereby forming the cavity between the second substrate and the device wafer.
Dependencies are inferred from the claim text.