Etching processing method and etching processing apparatus
AssigneeHitachi High-Tech Corporation
InventorsHiroto Otake, Takashi Hattori
Life of this patent
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Abstract
To provide an etching processing method and an etching processing apparatus which allow an aluminum oxide film to be etched with high accuracy and with a high selectivity to each of a silicon oxide film and a silicon nitride film, the etching processing method includes the step of placing, in a processing chamber, a wafer having the aluminum oxide film disposed on an upper surface thereof, maintaining the wafer at a temperature of −20° C. or less, and supplying vapor of hydrogen fluoride from a plurality of through holes in a plate-like member disposed above the upper surface of the wafer with a predetermined gap being provided therebetween only for a predetermined period to etch the aluminum oxide film.
Claims28
An etching processing method comprising the step of:
- placing, in a processing chamber, a wafer having an aluminum oxide film disposed on an upper surface thereof, maintaining the wafer at a temperature of −20° C. or less, and supplying vapor of hydrogen fluoride from a plurality of through holes in a plate member disposed above the upper surface of the wafer with a gap being provided therebetween only for a period to etch the aluminum oxide film.
An etching processing apparatus comprising:
- a vacuum container;
- a stage disposed in a space of the vacuum container and having an upper surface on which a wafer to be processed having an aluminum oxide film disposed in advance on a surface thereof is to be placed;
- a plate member disposed above the aluminum oxide film of the wafer being placed on the stage to face the aluminum oxide film with a predetermined gap being provided therebetween, the plate member including a plurality of through holes through which vapor of a processing gas containing hydrogen fluoride is to be introduced into a space located above the aluminum oxide film and including an interior of the gap;
- and
- a temperature adjustment mechanism that adjusts a temperature of the stage or the wafer placed thereon to −20° C. or less.
Dependencies are inferred from the claim text.