Fin field-effect transistor device and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMin-Hsiu Hung, Chien Chang, Yi-Hsiang Chao, Hung-Yi Huang, Chih-Wei Chang
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Abstract
A method of forming a semiconductor device includes forming source/drain regions on opposing sides of a gate structure, where the gate structure is over a fin and surrounded by a first dielectric layer; forming openings in the first dielectric layer to expose the source/drain regions; selectively forming silicide regions in the openings on the source/drain regions using a plasma-enhanced chemical vapor deposition (PECVD) process; and filling the openings with an electrically conductive material.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming source/drain regions on opposing sides of a gate structure, wherein the gate structure is over a fin and surrounded by a first dielectric layer;
- forming openings in the first dielectric layer to expose the source/drain regions;
- performing a plasma-enhanced chemical vapor deposition (PECVD) process to selectively form silicide regions in the openings on the source/drain regions, wherein an average energy of plasmas in the PECVD process is tuned to be above a first activation energy for forming the silicide regions on the source/drain regions and below a second activation energy for forming the silicide regions on the first dielectric layer, wherein the PECVD process forms the silicide regions at bottoms of the openings on the source/drain regions but does not form a material along sidewalls of the openings;
- and
- filling the openings with an electrically conductive material.
A method of forming a semiconductor device, the method comprising:
- forming an opening in a dielectric layer to expose a source/drain region under the dielectric layer, the opening exposing first sidewalls of the dielectric layer;
- selectively forming a silicide material at a bottom of the opening on the source/drain region by performing a plasma-enhanced chemical vapor deposition (PECVD) process, wherein an RF source for the PECVD process is turned on and off periodically during the PECVD process, wherein an average energy of plasmas of the PECVD process is adjusted to be above a first activation energy for forming the silicide material on the source/drain region but below a second activation energy for forming the silicide material on the dielectric layer, wherein after the PECVD process, the source/drain region is covered by the silicide material, and the first sidewalls of the dielectric layer are exposed by the silicide material;
- and
- filling the opening with a conductive material.
A method of forming a semiconductor device, the method comprising:
- forming a gate structure over a fin;
- forming source/drain regions over the fin on opposing sides of the gate structure;
- forming a dielectric layer over the fin around the gate structure;
- forming openings in the dielectric layer to expose the source/drain regions;
- performing a plasma-enhanced chemical vapor deposition (PECVD) process, wherein an RF source of the PECVD process is turned on and off alternately to tune an average energy of plasmas of the PECVD process to be within a pre-determined range, wherein the PECVD process selectively forms silicide regions at bottoms of the openings on the source/drain regions;
- forming a self-aligned barrier layer over the silicide regions by converting an upper layer of the silicide regions into a nitride or an oxide of the silicide regions;
- and
- after the converting, filling the openings with an electrically conductive material.
Dependencies are inferred from the claim text.