Back to results
US 11,901,182 B2Granted
Silicide film nucleation
AssigneeApplied Materials, Inc.
InventorsXuebin Li, Errol Antonio C. Sanchez, Patricia M. Liu
Life of this patent
Estimating the term…
Abstract
Embodiments disclosed herein are directed to forming MOSFET devices. In particular, one or more pre-silicide treatments are performed on a substrate prior to the deposition of the metal-silicide layer to improve the density and performance of the metal-silicide layer in the MOSFETs. The metal-silicide formation formed with the pre-silicide treatment(s) can occur before or after the formation of metal gates during MOSFET fabrication.
Claims13
A system for fabricating a metal oxide semiconductor field effect transistor (MOSFET) device, comprising:
- a transfer chamber defining a transfer space;
- an n-type metal oxide semiconductor (NMOS) chamber, a p-type metal oxide semiconductor (PMOS) chamber, a pre-clean chamber, a metal-silicide deposition chamber, and a plasma chamber, wherein each of the NMOS chamber, the PMOS chamber, the pre-clean chamber, the metal-silicide deposition chamber, and the plasma chamber is coupled to the transfer chamber, and the NMOS and PMOS chambers are each source-drain epitaxy chambers;
- a transfer robot in the transfer space configured to access the transfer chamber, the NMOS chamber, the PMOS chamber, the pre-clean chamber, the metal-silicide deposition chamber, and the plasma chamber;
- and
- a controller comprising instructions for device fabrication, wherein, when executed by a processor, the instructions cause the system to:
- retrieve a substrate from the transfer chamber;
- dispose the substrate in the NMOS chamber, the PMOS chamber, or the plasma chamber;
- perform at least one pre-silicide treatment on the substrate to increase a concentration of a dopant within the substrate or to increase a surface roughness of the substrate, the at least one pre-silicide treatment comprising soaking the substrate in one or more precursor sources;
- transfer the substrate into the metal-silicide deposition chamber;
- and
- subsequently, form, by deposition, a metal-silicide on the substrate in the metal-silicide deposition chamber.
8 more elements
A system for fabricating a metal oxide semiconductor field effect transistor (MOSFET) device, comprising:
- a transfer chamber defining a transfer space;
- an n-type metal oxide semiconductor (NMOS) chamber, a p-type metal oxide semiconductor (PMOS) chamber, a pre-clean chamber, a metal-silicide deposition chamber, and a plasma chamber, wherein each of the NMOS chamber, the PMOS chamber, the pre-clean chamber, the metal-silicide deposition chamber, and the plasma chamber is coupled to the transfer chamber, and the NMOS and PMOS chambers are each source-drain epitaxy chambers;
- a transfer robot in the transfer space configured to access the transfer chamber, the NMOS chamber, the PMOS chamber, the pre-clean chamber, the metal-silicide deposition chamber, and the plasma chamber;
- and
- a controller comprising instructions for device fabrication, wherein, when executed by a processor, the instructions cause the system to:
- retrieve a substrate from the transfer chamber;
- dispose the substrate in the NMOS chamber, the PMOS chamber, or the plasma chamber;
- form a seed layer on the substrate, wherein the seed layer comprises a doped silicon layer from 1 nm to 5 nm thick;
- pre-soak the substrate in one or more precursor sources;
- transfer the substrate into the metal-silicide deposition chamber;
- and
- subsequently, form, by chemical vapor deposition, a metal-silicide layer on the seed layer, wherein forming the metal-silicide layer consumes a first portion of the seed layer, and wherein a second portion of the seed layer remains on the substrate after forming the metal-silicide layer.
9 more elements
A system for fabricating a metal oxide semiconductor field effect transistor (MOSFET) device, comprising:
- a transfer chamber defining a transfer space;
- an n-type metal oxide semiconductor (NMOS) chamber, a p-type metal oxide semiconductor (PMOS) chamber, a pre-clean chamber, a metal-silicide deposition chamber, and a plasma chamber, wherein each of the NMOS chamber, the PMOS chamber, the pre-clean chamber, the metal-silicide deposition chamber, and the plasma chamber is coupled to the transfer chamber, and the NMOS and PMOS chambers are each source-drain epitaxy chambers;
- a transfer robot in the transfer space configured to access the transfer chamber, the NMOS chamber, the PMOS chamber, the pre-clean chamber, the metal-silicide deposition chamber, and the plasma chamber;
- a controller comprising instructions for device fabrication, wherein, when executed by a processor, the instructions cause the system to:
- retrieve a substrate from the transfer chamber;
- dispose the substrate in the NMOS chamber, the PMOS chamber, or the plasma chamber;
- perform a pre-silicide treatment on the substrate, wherein the pre-silicide treatment comprises:
- exposing the substrate to one or more precursor sources to form a doped surface of the substrate;
- transfer the substrate into the metal-silicide deposition chamber;
- and
- subsequent to performing the pre-silicide treatment on the substrate, form, by chemical vapor deposition, a metal-silicide layer on the treated substrate.
8 more elements
Dependencies are inferred from the claim text.