Method and device for depositing silicon onto substrates
AssigneeASM IP Holding B.V.
InventorsJohn Tolle, Robert Vyne
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Abstract
A method for forming a layer on a substrate includes providing a substrate in a reactor of a semiconductor processing system, the reactor having a divider separating an upper chamber from a lower chamber and a substrate holder therein, the substrate having upper and lower surfaces. The wafer is positioned within the reactor using the substrate holder such that the upper surface bounds the upper chamber, a silicon-containing gas is flowed through the upper chamber to deposit a layer of the upper surface, and a halogen-containing gas is flowed through the lower chamber to etch a deposited film on at least one wall bounding the lower chamber while flowing the silicon-containing gas through the upper chamber. Semiconductor processing systems are also described.
Claims19
A method for forming a layer on a substrate, the method comprising:
- providing a substrate in a reactor of a semiconductor processing system, the reactor having a divider and a substrate holder therein, the divider separating an upper chamber from a lower chamber, wherein the substrate has an upper surface and an opposite lower surface;
- positioning the substrate within the upper chamber of the reactor using the substrate holder;
- flowing a silicon-containing gas from a silicon-containing gas source out a first inlet disposed in the upper chamber of the reactor, and through the upper chamber of the reactor to deposit a layer of the upper surface of the substrate;
- and
- flowing a halogen-containing gas from a halogen-containing gas source out a second inlet disposed in the lower chamber of the reactor, and through the lower chamber of the reactor to etch a deposited film on at least one wall bounding the lower chamber of the reactor while flowing the silicon-containing gas through the upper chamber of the reactor.
Dependencies are inferred from the claim text.