Quantum dots and production method thereof
AssigneesSamsung Electronics Co., Ltd., The Trustees of the University of Pennsylvania
InventorsTae Gon Kim, Nuri Oh, Tianshuo Zhao, Cherie Kagan, Eun Joo Jang, Christopher Murray
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Abstract
A production method of a quantum dot comprising a Group IIIA-VA compound, the quantum dot as prepared, and an electronic device including the same, and the production method includes: supplying a Group VA element precursor including a halide of a Group VA element and a first ligand of a phosphine compound or a first amine compound; and performing a reaction between the Group VA element precursor and a Group IIIA metal precursor in the presence of a reducing agent in an organic reaction medium including a second amine compound.
Claims19
A plurality of quantum dots comprising a Group IIIA-VA compound and not comprising cadmium,
- wherein
- the Group IIIA-VA compound comprises
- a Group IIIA metal comprising indium and optionally gallium, aluminum, or a combination thereof;
- and
- a Group VA element comprising phosphorus, antimony, arsenic, bismuth, or a combination thereof, and
- a molar ratio of the Group VA element with respect to the Group IIIA metal is greater than or equal to about 1.15 as determined by an inductively coupled plasma spectroscopic analysis.
Dependencies are inferred from the claim text.