Semiconductor arrangement and method for making
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Shan Chen, Hao-Heng Liu
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Abstract
A method for fabricating a semiconductor arrangement is provided. The method includes forming a first dielectric layer and forming a first semiconductive layer over the first dielectric layer. The first semiconductive layer is patterned to form a patterned first semiconductive layer. The first dielectric layer is patterned using the patterned first semiconductive layer to form a patterned first dielectric layer. A second semiconductive layer is formed over the patterned first dielectric layer and the patterned first semiconductive layer.
Claims20
A method for fabricating a semiconductor arrangement, comprising:
- forming a first dielectric layer;
- forming a first semiconductive layer over the first dielectric layer;
- forming a photoresist layer over the first semiconductive layer;
- patterning the first semiconductive layer using the photoresist layer to form a patterned first semiconductive layer, wherein a first portion of the first dielectric layer is exposed through the patterned first semiconductive layer;
- forming a second photoresist layer over the patterned first semiconductive layer, wherein a second portion of the first dielectric layer is exposed through the second photoresist layer, the second portion of the first dielectric layer being a portion of but less than all of the first portion of the first dielectric layer;
- and
- recessing the second portion of the first dielectric layer using the second photoresist layer.
A method for fabricating a semiconductor arrangement, comprising:
- forming a first semiconductive layer;
- patterning the first semiconductive layer to form a patterned first semiconductive layer;
- forming a first dielectric layer over the patterned first semiconductive layer;
- and
- forming a second semiconductive layer over the first dielectric layer, wherein a sidewall of the second semiconductive layer is spaced apart from a sidewall of the patterned first semiconductive layer by the first dielectric layer.
A method for fabricating a semiconductor arrangement, comprising:
- forming a first dielectric layer over an oxide layer;
- forming a first semiconductive layer over the first dielectric layer;
- performing a first etch to form a first semiconductive structure and a second semiconductive structure from the first semiconductive layer;
- and
- performing a second etch to recess the first dielectric layer between the first semiconductive structure and the second semiconductive structure and remove a portion of the second semiconductive structure.
Dependencies are inferred from the claim text.