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US 11,901,175 B2Granted
Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
AssigneeASM IP Holding B.V.
InventorsEric James Shero, Paul Ma, Bed Prasad Sharma, Shankar Swaminathan
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Abstract
A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.
Claims18
A structure, comprising:
- a substrate comprising an outer surface;
- a first material disposed on the outer surface of the substrate comprising titanium oxide;
- a second material disposed on the outer surface of the substrate comprising at least one of a Group IV nitride or a metal nitride;
- and
- a silicon nitride layer selectively disposed on the second material relative to the first material.
2 more elements
A structure, comprising:
- a substrate comprising an outer surface;
- a first material disposed on the outer surface of the substrate comprising at least one of silicon oxide or titanium oxide;
- a second material disposed on the outer surface of the substrate comprising titanium nitride;
- and
- a silicon nitride layer selectively disposed on the second material relative to the first material.
2 more elements
A structure, comprising:
- a substrate comprising an outer surface;
- a first material disposed on the outer surface of the substrate comprising —OH terminals on a surface of the first material;
- a second material disposed on the outer surface of the substrate, wherein the second material is different than the first material;
- and
- a silicon nitride layer selectively disposed on the second material relative to the first material.
2 more elements
Dependencies are inferred from the claim text.