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US 11,901,169 B2Granted
Barrier coatings
AssigneesUchicago Argonne, LLC, Incom, Inc.
InventorsJeffrey W. Elam, Anil U. Mane, Mark Popecki, Michael Minot
Life of this patent
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Abstract
A secondary electron emissive layer resistant to infiltration and fouling. A barrier layer is formed by atomic layer deposition. The barrier layer may be an emissive layer and/or an interlayer. The barrier layer may form an interlayer that is a part of an electron amplifier positioned between an emissive layer and a resistive layer. The barrier layer is resistive to fluorine migration from either the emissive layer or the resistive layer.
Claims15
An electron detector device comprising:
- a microchannel plate having a plurality of channels extending therethrough;
- a resistive layer deposited on the microchannel plate;
- an emissive layer deposited on the resistive layer;
- and
- an interlayer deposited between the resistive layer and the emissive layer;
- wherein the interlayer comprises a metal oxyfluoride;
- and
- wherein the metal oxyfluoride is MgOxFy, where x is greater than 0 and less than 1 and y is greater than 0 and less than 2(1−x).
5 more elements
A method of forming an electron amplifier comprising:
- providing an electron amplifier substrate, having a resistance, within an atomic layer deposition reactor;
- and
- depositing a barrier layer selected from a group comprising Al2O3, MgF2, CaF2, MgOxFy, where x is greater than 0 and less than 1 and y is greater than 0 and less than 2(1−x), by an atomic layer deposition process including at least one cycle of:
- pulsing a first metal precursor into the reactor for a first metal precursor pulse time;
- purging the reactor of the first metal precursor;
- pulsing a second precursor into the reactor for a second precursor pulse time;
- and
- purging the reactor of the second precursor.
5 more elements
Dependencies are inferred from the claim text.