# US 11,901,167 B2 · Ion beam deposition target life enhancement > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,901,167 B2 - Document ID: US11901167B2 - Status: Granted - Kind: B2 - Application number: 17/723,005 - Filed: 2022-04-18 - Published: 2023-10-19 - Granted: 2024-02-13 - Earliest claimed: 2022-04-18 - Assignees: Plasma-Therm NES LLC - Applicants: Plasma-Therm NES LLC - Inventors: Sarpangala Hariharakeshava Hegde; Vincent C. Lee; Wei-Hua Hsiao; Joseph Barraco - Web page: https://patentgrep.com/patent/US11901167B2 ## CPC - H01J 37/3417: {Arrangements} - H01J 37/347: {Thickness uniformity of coated layers or desired profile of target erosion} - C23C 14/225: {Oblique incidence of vaporised material on substrate} - C23C 14/3407: {Cathode assembly for sputtering apparatus, e.g. Target} - C23C 14/3492: {Variation of parameters during sputtering} - C23C 14/352: {using more than one target (C23C14/56 takes precedence)} - C23C 14/46: by ion beam produced by an external ion source - H01J 37/3464: {Operating strategies} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract The present disclosure provides a method for increased target utilization within a sputtering system. A plurality of targets are provided wherein each target is operatively connected to a central axis. An ion beam is generated within the sputtering system. The generated ion beam is directed at a first location of a first target for a first time period. Each target is moved by rotating the central axis. The generated ion beam is directed at a second location of the first target for a second time period. ## Claims ### Claim 1 A method for increased target utilization within a sputtering system comprising the steps of: providing a plurality of targets, each target of the plurality of targets is operatively connected to a target holder, each target of the plurality of targets is positioned along an outer portion of a generally circular pallet of the sputtering system, the circular pallet having a central axis; generating a first ion beam within the sputtering system; directing the first generated ion beam at a first location of a first target; discontinuing the generation of the first ion beam; rotating the central axis of the circular pallet; generating a second ion beam within the sputtering system; and directing the second generated ion beam at a second location of said first target. ### Claim 2 (depends on 1) The method of claim 1 wherein said first location of said first target is offset from said second location of said first target by a distance having a range of 1 mm to 50 mm. ### Claim 3 (depends on 1) The method of claim 1 wherein the rotation of the central axis is by 0.16 degrees to 8 degrees. ### Claim 4 (depends on 1) The method of claim 1 wherein the first generated ion beam and the second generated ion beam are applied to said first target for an equal time. ### Claim 5 (depends on 1) The method of claim 1 wherein the first generated ion beam and the second generated ion beam are applied to said first target with same process conditions. ### Claim 6 (depends on 1) The method of claim 1 wherein the first generated ion beam and the second generated ion beam are applied to said first target for different amounts of time. ### Claim 7 (depends on 1) The method of claim 1 wherein the first generated ion beam and the second generated ion beam are applied to said first target with different process conditions. ### Claim 8 A method for increased target utilization within a sputtering system comprising the steps of: providing a plurality of targets, each target of the plurality of targets is operatively connected to a target holder, each target of the plurality of targets is positioned along an outer portion of a generally circular pallet of the sputtering system, the circular pallet having a central axis; generating an ion beam within the sputtering system; directing the generated ion beam at a first location of a first target for a first time period; rotating the central axis of the circular pallet; and directing the generated ion beam at a second location of said first target for a second time period. ### Claim 9 (depends on 8) The method of claim 8 wherein said first location of said first target is offset from said second location of said first target by a distance having a range of 1 mm to 50 mm. ### Claim 10 (depends on 8) The method of claim 8 wherein the rotation of the central axis is by 0.16 degrees to 8 degrees. ### Claim 11 (depends on 8) The method of claim 8 wherein the first time period is at least 0.5 seconds. ### Claim 12 (depends on 11) The method of claim 11 wherein the second time period is at least 0.5 seconds. ### Claim 13 (depends on 8) The method of claim 8 wherein the first time period is at least 1 second. ### Claim 14 (depends on 13) The method of claim 13 wherein the second time period is at least 1 second. ### Claim 15 (depends on 8) The method of claim 8 wherein the first time period is at least 2 seconds. ### Claim 16 (depends on 15) The method of claim 15 wherein the second time period is at least 2 seconds. ### Claim 17 A method for increased target utilization within a sputtering system comprising the steps of: providing a plurality of targets, each target of the plurality of targets is operatively connected to a target holder, each target of the plurality of targets is positioned along an outer portion of a generally circular pallet of the sputtering system, the circular pallet having a central axis; generating an ion beam within the sputtering system; directing the generated ion beam at a first location of a first target; exposing a first substrate to sputtered material from said first location of said first target; rotating the central axis of the circular pallet; directing the generated ion beam at a second location of said first target; and exposing a second substrate to sputtered material from said second location of said first target. ### Claim 18 (depends on 17) The method of claim 17 wherein said first location of said first target is offset from said second location of said first target by a distance having a range of 1 mm to 50 mm. ### Claim 19 (depends on 17) The method of claim 17 wherein the rotation of the central axis is by 0.16 degrees to 8 degrees. ### Claim 20 (depends on 17) The method of claim 17 further comprising removing said first substrate from the sputtering system before exposing said second substrate to sputtered material from said second location of said first target.