Semiconductor memory device and method of operating the same
AssigneeSK hynix Inc.
InventorHee Youl Lee
Life of this patent
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Abstract
A read operation on selected memory cells may be performed by a method of operating a semiconductor memory device. The method may include determining a read voltage to be used in the read operation among first to 2N−1-th read voltages, applying the determined read voltage to a selected word line connected to the selected memory cells, and applying a read pass voltage to unselected word lines based on whether the determined read voltage is a first read voltage. Here, N may be a natural number of 2 or more.
Claims19
A method of operating a semiconductor memory device configured to perform a read operation on selected memory cells, the method comprising:
- determining a read voltage to be used in the read operation among first to 2N−1-th read voltages, wherein N is a natural number of 2 or more;
- applying a determined read voltage to a selected word line connected to the selected memory cells;
- and
- applying a first read pass voltage or a second read pass voltage greater than the first read pass voltage to adjacent word lines that are adjacent to the selected word line among unselected word lines based on whether the determined read voltage is the first read voltage among the first to 2N−1-th read voltages.
A method of operating a semiconductor memory device configured to perform a read operation on selected memory cells, the method comprising:
- determining a read voltage to be used in the read operation among first to 2N−1-th read voltages, wherein N is a natural number of 2 or more;
- applying a first precharge voltage or a second precharge voltage greater than the first precharge voltage to bit lines connected to the selected memory cells, based on whether a determined read voltage is the first read voltage among the first to 2N−1-th read voltages;
- and
- applying the determined read voltage to a selected word line connected to the selected memory cells.
A method of operating a semiconductor memory device configured to perform a program operation on selected memory cells, wherein the program operation comprises a plurality of program loops, each of the plurality of program loops comprising a program pulse application operation and a program verify operation, wherein the program verify operation comprises:
- determining a verify voltage to be used in a verify operation among first to 2N−1-th verify voltages, wherein N is a natural number of 2 or more;
- applying a determined verify voltage to a selected word line connected to the selected memory cells;
- and
- applying a first read pass voltage or a second read pass voltage greater than the first read pass voltage to adjacent word lines that are adjacent to the selected word line among unselected word lines based on whether the determined verify voltage is the first verify voltage among the first to 2N−1-th verify voltages.
A method of operating a semiconductor memory device configured to perform a program operation on selected memory cells, wherein the program operation comprises a plurality of program loops, each of the plurality of program loops comprising a program pulse application operation and a program verify operation, wherein the program verify operation comprises:
- determining a verify voltage to be used in a verify operation among first to 2N−1-th verify voltages, wherein N is a natural number of 2 or more;
- applying a first precharge voltage or a second precharge voltage greater than the first precharge voltage to bit lines connected to the selected memory cells, based on whether a determined verify voltage is the first verify voltage among the first to 2N−1-th verify voltages;
- and
- applying the determined verify voltage to a selected word line connected the selected memory cells.
Dependencies are inferred from the claim text.